BUL128-K
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- Mfr.Part #
- BUL128-K
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 45,048
- In Stock ：
- 45,048
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 70W
- Current - Collector (Ic) (Max) :
- 4A
- Base Part Number :
- BUL128
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 200μA
- Supplier Device Package :
- TO-220AB
- Transistor Type :
- NPN
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 2A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 70W
- Datasheets
- BUL128-K
BUL128-K Documents
NPN 150°C TJ 200μA TO-220-3 Tube Through Hole
BUL128-K Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 2A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 4A volts.
BUL128-K Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the supplier device package of TO-220AB
BUL128-K Applications
There are a lot of STMicroelectronics
BUL128-K applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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