BUL146
- Mfr.Part #
- BUL146
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 6A TO220
- Stock
- 2,681
- In Stock :
- 2,681
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 240
- Current Rating :
- 8A
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Base Voltage (VCBO) :
- 700V
- Max Collector Current :
- 6A
- Max Power Dissipation :
- 100W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 14MHz
- Published :
- 2009
- Gain Bandwidth Product :
- 14MHz
- Voltage - Rated DC :
- 400V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 700mV
- Series :
- SWITCHMODE™
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Current - Collector (Ic) (Max) :
- 6A
- Current - Collector Cutoff (Max) :
- 100μA
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 930mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 600mA, 3A
- Base Part Number :
- BUL146
- Polarity/Channel Type :
- NPN
- hFE Min :
- 5
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- JESD-609 Code :
- e0
- Emitter Base Voltage (VEBO) :
- 9V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 5V
- Qualification Status :
- Not Qualified
- Datasheets
- BUL146

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL146 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 930mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 600mA, 3A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 14MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
BUL146 Features
the DC current gain for this device is 14 @ 500mA 5V
a collector emitter saturation voltage of 930mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 14MHz
BUL146 Applications
There are a lot of ON Semiconductor
BUL146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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