BUL146
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- Mfr.Part #
- BUL146
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 6A TO220
- Stock
- 2,681
- In Stock ：
- 2,681
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 5
- Voltage - Rated DC :
- 400V
- Collector Base Voltage (VCBO) :
- 700V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Voltage (VCEO) :
- 700mV
- Gain Bandwidth Product :
- 14MHz
- Mount :
- Through Hole
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 600mA, 3A
- Series :
- SWITCHMODE™
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transition Frequency :
- 14MHz
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current Rating :
- 8A
- JESD-609 Code :
- e0
- Transistor Type :
- NPN
- Base Part Number :
- BUL146
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 5V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Current - Collector (Ic) (Max) :
- 6A
- Max Power Dissipation :
- 100W
- Number of Terminations :
- 3
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 930mV
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 100μA
- Peak Reflow Temperature (Cel) :
- 240
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Max Collector Current :
- 6A
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- BUL146
BUL146 Documents
NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL146 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 930mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 600mA, 3A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 14MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
BUL146 Features
the DC current gain for this device is 14 @ 500mA 5V
a collector emitter saturation voltage of 930mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 14MHz
BUL146 Applications
There are a lot of ON Semiconductor
BUL146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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