BUL128D-B
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- Mfr.Part #
- BUL128D-B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220
- Stock
- 8,704
- In Stock ：
- 8,704
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 250μA
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Base Voltage (VCBO) :
- 700V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Base Part Number :
- BUL128
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Max Power Dissipation :
- 70W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- Packaging :
- Tube
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 70W
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1A, 4A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 400V
- Length :
- 10.4mm
- Height :
- 9.15mm
- Radiation Hardening :
- No
- Datasheets
- BUL128D-B
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL128D-B Overview
This device has a DC current gain of 12 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1A, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.A maximum collector current of 4A volts is possible.
BUL128D-B Features
the DC current gain for this device is 12 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128D-B Applications
There are a lot of STMicroelectronics
BUL128D-B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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