BUL1403ED

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Mfr.Part #
BUL1403ED
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 650V 3A TO220
Stock
8,030
In Stock :
8,030

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Number of Elements :
1
Current - Collector Cutoff (Max) :
1mA
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
650V
Element Configuration :
Single
Current Rating :
3A
Radiation Hardening :
No
hFE Min :
15
Collector Base Voltage (VCBO) :
1.4kV
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 400mA 3V
Base Part Number :
BUL140
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
Number of Pins :
3
Max Collector Current :
3A
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
650V
Max Power Dissipation :
80W
ECCN Code :
EAR99
JESD-609 Code :
e3
Power Dissipation :
80W
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
650V
Mount :
Through Hole
Transistor Type :
NPN
Pin Count :
3
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 500mA
Emitter Base Voltage (VEBO) :
11V
Datasheets
BUL1403ED
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL1403ED from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:BUL140, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, BUL1403ED pinout, BUL1403ED datasheet PDF, BUL1403ED amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL1403ED ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL1403ED


NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL1403ED Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 400mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 50mA, 500mA.If the emitter base voltage is kept at 11V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.Collector current can be as low as 3A volts at its maximum.

BUL1403ED Features


the DC current gain for this device is 15 @ 400mA 3V
the vce saturation(Max) is 2.5V @ 50mA, 500mA
the emitter base voltage is kept at 11V
the current rating of this device is 3A


BUL1403ED Applications


There are a lot of STMicroelectronics
BUL1403ED applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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