BSS670T116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Drain to Source Voltage (Vdss) :

60 V

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Series :

OptiMOS®

Supplier Device Package :

SST3

Power Dissipation (Max) :

200mW (Ta)

Number of Channels :

1 Channel

Configuration :

Single

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

RoHS :

Details

Transistor Type :

1 N-Channel

Packaging :

MouseReel

Rds On (Max) @ Id, Vgs :

680mOhm @ 650mA, 10V

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-3

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Mounting Style :

SMD/SMT

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

650mA (Ta)

Vgs(th) (Max) @ Id :

2V @ 10µA

Input Capacitance (Ciss) (Max) @ Vds :

47 pF @ 30 V

Product Status :

Active

Rise Time :

5.2 ns

Maximum Operating Temperature :

+ 150 C