BSS670S2L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Pbfree Code :

yes

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

650m Ω @ 270mA, 10V

Vgs(th) (Max) @ Id :

2V @ 2.7μA

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Elements :

1

Published :

2003

Drain-source On Resistance-Max :

0.825Ohm

Number of Terminations :

3

Power Dissipation-Max :

360mW Ta

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

2.26nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V

Drain to Source Voltage (Vdss) :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.54A

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Terminal Finish :

Matte Tin (Sn)

HTS Code :

8541.21.00.95

Series :

OptiMOS™

Pin Count :

3

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

10 pF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

FET Type :

N-Channel