BSS64E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DC Current Gain-Min (hFE) :

20

Qualification Status :

COMMERCIAL

Collector-Emitter Voltage-Max :

80 V

Transistor Type :

NPN

Operating Temperature :

150°C (TJ)

Voltage - Collector Emitter Breakdown (Max) :

80 V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector (Ic) (Max) :

800 mA

Polarity/Channel Type :

NPN

Product Status :

Active

Number of Elements :

1

Continuous Collector Current :

800

Vce Saturation (Max) @ Ib, Ic :

700mV @ 400μA, 4mA

Configuration :

Single

Collector Current-Max (IC) :

0.8 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4mA, 1V

Supplier Device Package :

SOT-23

Manufacturer :

Rochester Electronics LLC

JESD-30 Code :

R-PDSO-G3

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Reach Compliance Code :

Unknown

Current - Collector Cutoff (Max) :

100nA (ICBO)

Frequency - Transition :

100MHz

Package :

Bulk

Transistor Polarity :

NPN

Terminal Position :

Dual

Power - Max :

330 mW

Mounting Type :

Surface Mount

Surface Mount :

yes

Series :

-

Transition Frequency :

100

Number of Terminals :

3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing