BSO615N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.6A

Lead Free :

Contains Lead

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.15Ohm

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

60V

Avalanche Energy Rating (Eas) :

60 mJ

Current Rating :

2.6A

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

FET Type :

2 N-Channel (Dual)

RoHS Status :

Non-RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

10.4A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Series :

SIPMOS®

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Rise Time :

15ns

Max Power Dissipation :

2W

Number of Terminations :

8

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.6A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Published :

2000

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

235

Base Part Number :

BSO615

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs(th) (Max) @ Id :

2V @ 20μA