BSO615CGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2V @ 20μA

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

110m Ω @ 3.1A, 10V

Power Dissipation :

2W

Max Dual Supply Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Number of Pins :

8

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

3.1A 2A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

3.1A

FET Type :

N and P-Channel

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Pbfree Code :

yes

Series :

SIPMOS®

Base Part Number :

BSO615

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.11Ohm

Operating Temperature :

-55°C~150°C TJ

Published :

1999

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

47 mJ

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

26 Weeks

Pin Count :

8

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Halogen Free :

Not Halogen Free

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED