BSO613SPVGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Mounting Type :

Surface Mount

Rise Time :

11 ns

Mounting Style :

SMD/SMT

Packaging :

Tape and Reel

Rds On (Max) @ Id, Vgs :

130mOhm @ 3.44A, 10V

Product Category :

MOSFET

Continuous Drain Current :

3.44(A)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Base Product Number :

BSO613

Power Dissipation (Max) :

2.5W (Ta)

Rad Hardened :

No

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

FET Type :

P-Channel

Transistor Type :

1 P-Channel

Product Type :

MOSFET

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

Compliant

Transistor Polarity :

P-Channel

Power Dissipation :

2.5(W)

Current - Continuous Drain (Id) @ 25°C :

3.44A (Ta)

Supplier Device Package :

PG-DSO-8-6

Manufacturer :

Infineon

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOIC-8

Series :

Automotive, AEC-Q101, SIPMOS®

Polarity :

P

Subcategory :

MOSFETs

Vgs (Max) :

±20V

Brand :

Infineon Technologies

Drain-Source On-Volt :

60(V)

Gate-Source Voltage (Max) :

±20(V)

Operating Temp Range :

-55C to 150C

Operating Temperature Classification :

Military

Channel Mode :

Enhancement

Number of Elements :

1

Type :

Small Signal

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Technology :

Si

Input Capacitance (Ciss) (Max) @ Vds :

875 pF @ 25 V

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

60 V

Number of Channels :

1 Channel

Factory Lead Time :

26 Weeks

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED