BSO612CV

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

3A 2A

Number of Pins :

8

Base Part Number :

BSO612

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4V @ 20µA

Avalanche Energy Rating (Eas) :

47 mJ

Drain Current-Max (Abs) (ID) :

3A

Drain to Source Breakdown Voltage :

-60V

Current Rating :

3A

Mount :

Surface Mount

Published :

1999

ECCN Code :

EAR99

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Drain-source On Resistance-Max :

0.12Ohm

Turn-Off Delay Time :

145 ns

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

60V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

235

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2A

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

FET Feature :

Standard

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Rise Time :

60ns

Power Dissipation :

2W

Fall Time (Typ) :

95 ns

Number of Elements :

2

Series :

SIPMOS®