BSO613SPVGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer Package Identifier :

PG-SO 8

Factory Lead Time :

26 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

-3V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Series :

SIPMOS®

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

3.44A Ta

Additional Feature :

AVALANCHE RATED

Terminal Position :

Dual

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Not Halogen Free

Vgs(th) (Max) @ Id :

4V @ 1mA

Continuous Drain Current (ID) :

-3.44A

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

130m Ω @ 3.44A, 10V

Number of Pins :

8

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Pin Count :

8

FET Type :

P-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-60V

Height :

1.75mm

Mount :

Surface Mount

Power Dissipation :

2.5W

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Rise Time :

11ns

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

32 ns

Pbfree Code :

yes

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Published :

1999

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Channels :

1

Current Rating :

-3.44A

Power Dissipation-Max :

2.5W Ta

Max Dual Supply Voltage :

-60V