BSO612CVGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Number of Terminations :

8

Number of Pins :

8

Factory Lead Time :

12 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

SIPMOS®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tape and Reel (TR)

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Current Rating :

3A

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

4V @ 20µA

Published :

1999

Base Part Number :

BSO612

Halogen Free :

Not Halogen Free

Avalanche Energy Rating (Eas) :

47 mJ

Reference Standard :

AEC-Q101

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

3A 2A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 10V

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

Lead Free :

Lead Free

JESD-609 Code :

e4

FET Type :

N and P-Channel

Contact Plating :

Tin

ECCN Code :

EAR99

Terminal Position :

Dual

Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Max Dual Supply Voltage :

-60V

Continuous Drain Current (ID) :

2A

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

60V