BSH114,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Power Dissipation-Max :

360mW Ta 830mW Tc

Drain to Source Voltage (Vdss) :

100V

Power Dissipation :

830mW

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

4 Weeks

Drain-source On Resistance-Max :

0.5Ohm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

0.85A

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

500m Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

TrenchMOS™

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

138pF @ 25V

Transistor Element Material :

SILICON

Number of Terminations :

3

Pin Count :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Pins :

3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Continuous Drain Current (ID) :

850mA

Number of Elements :

1

FET Type :

N-Channel