BSH111BKR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

12.6 ns

Gate to Source Voltage (Vgs) :

10V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Power Dissipation-Max :

302mW Ta

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 30V

Fall Time (Typ) :

4.8 ns

Packaging :

Cut Tape (CT)

Number of Pins :

3

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

4 Ω @ 200mA, 4.5V

Operating Temperature :

-55°C~150°C TJ

Ambient Temperature Range High :

150°C

Rise Time :

8.4ns

Mount :

Surface Mount

Vgs (Max) :

±10V

Turn On Delay Time :

8.3 ns

Power Dissipation :

302mW

Published :

2014

Drain-source On Resistance-Max :

4Ohm

Number of Elements :

1

Contact Plating :

Tin

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Feedback Cap-Max (Crss) :

7 pF

Threshold Voltage :

1V

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

210mA Ta

Terminal Position :

Dual

Pin Count :

3

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Height :

1.1mm

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

210mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks