BSH105,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

200m Ω @ 600mA, 4.5V

Max Dual Supply Voltage :

20V

Pin Count :

3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

570mV @ 1mA

Radiation Hardening :

No

Turn On Delay Time :

2 ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±8V

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

Turn-Off Delay Time :

45 ns

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

417mW Ta

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 4.5V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.05A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

8V

HTS Code :

8541.21.00.95

Drain-source On Resistance-Max :

0.25Ohm

Number of Pins :

3

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

152pF @ 16V

Published :

1998

Rise Time :

4.5ns

Fall Time (Typ) :

4.5 ns

Current - Continuous Drain (Id) @ 25°C :

1.05A Ta

Terminal Position :

Dual

Number of Elements :

1

FET Type :

N-Channel

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Power Dissipation :

417mW

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3