BSH108,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Terminal Form :

Gull wing

Operating Temperature :

-65°C~150°C TJ

Number of Pins :

3

Number of Elements :

1

Published :

1997

Rds On (Max) @ Id, Vgs :

120m Ω @ 1A, 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

FET Type :

N-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Factory Lead Time :

4 Weeks

Series :

TrenchMOS™

Continuous Drain Current (ID) :

1.9A

HTS Code :

8541.29.00.75

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

830mW Tc

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Terminations :

3

Drain-source On Resistance-Max :

0.14Ohm

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

830mW