BSH111,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-65°C~150°C TJ

Continuous Drain Current (ID) :

335mA

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

ECCN Code :

EAR99

JESD-609 Code :

e3

Max Dual Supply Voltage :

55V

Number of Elements :

1

Vgs (Max) :

±10V

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 4.5V

Power Dissipation-Max :

830mW Tc

Feedback Cap-Max (Crss) :

10 pF

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.29.00.75

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

55V

Additional Feature :

FAST SWITCHING

Gate to Source Voltage (Vgs) :

10V

Current - Continuous Drain (Id) @ 25°C :

335mA Ta

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Form :

Gull wing

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 8V

Terminal Position :

Dual

RoHS Status :

RoHS Compliant

Series :

TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

4Ohm

Power Dissipation :

830mW

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Surface Mount :

yes

Number of Pins :

3