BSH111,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Radiation Hardening :

No

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

830mW Tc

Series :

TrenchMOS™

Additional Feature :

FAST SWITCHING

Number of Terminations :

3

Terminal Form :

Gull wing

Vgs (Max) :

±10V

Time@Peak Reflow Temperature-Max (s) :

30

Max Dual Supply Voltage :

55V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation :

830mW

Number of Pins :

3

Feedback Cap-Max (Crss) :

10 pF

FET Type :

N-Channel

HTS Code :

8541.29.00.75

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Position :

Dual

Continuous Drain Current (ID) :

335mA

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 4.5V

RoHS Status :

RoHS Compliant

Number of Elements :

1

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

10V

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

55V

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Surface Mount :

yes

Pin Count :

3

Drain-source On Resistance-Max :

4Ohm

Current - Continuous Drain (Id) @ 25°C :

335mA Ta

Operating Temperature :

-65°C~150°C TJ

Published :

1997

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 8V

Transistor Element Material :

SILICON