BSH103,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

850mA

Power Dissipation :

500mW

Fall Time (Typ) :

3.5 ns

Max Dual Supply Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Terminal Position :

Dual

Power Dissipation-Max :

540mW Ta

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

FET Type :

N-Channel

Published :

1998

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 24V

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Factory Lead Time :

4 Weeks

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

850mA Ta

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Pin Count :

3

Drain-source On Resistance-Max :

0.5Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

400m Ω @ 500mA, 4.5V

Rise Time :

3.5ns

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Contact Plating :

Tin

Mounting Type :

Surface Mount

Turn On Delay Time :

2.5 ns

Number of Terminations :

3

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.85A

Number of Pins :

3

Vgs(th) (Max) @ Id :

400mV @ 1mA (Min)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260