BSH111,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Drain-source On Resistance-Max :

4Ohm

Number of Terminations :

3

Power Dissipation-Max :

830mW Tc

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

335mA Ta

Series :

TrenchMOS™

Package / Case :

TO-236-3, SC-59, SOT-23-3

Feedback Cap-Max (Crss) :

10 pF

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±10V

Number of Pins :

3

Continuous Drain Current (ID) :

335mA

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 8V

Mounting Type :

Surface Mount

Surface Mount :

yes

Additional Feature :

FAST SWITCHING

FET Type :

N-Channel

Operating Temperature :

-65°C~150°C TJ

Vgs(th) (Max) @ Id :

1.3V @ 1mA

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.75

DS Breakdown Voltage-Min :

55V

Pin Count :

3

Terminal Form :

Gull wing