BSH103,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

850mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 24V

Vgs(th) (Max) @ Id :

400mV @ 1mA (Min)

Continuous Drain Current (ID) :

850mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Published :

1998

Number of Terminations :

3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

400m Ω @ 500mA, 4.5V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Position :

Dual

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

750mW

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Pin Count :

3

Drain Current-Max (Abs) (ID) :

0.85A

Number of Elements :

1

Surface Mount :

yes

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain-source On Resistance-Max :

0.5Ohm

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Power Dissipation-Max :

540mW Ta