BSH112,235

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

5Ohm

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

10 pF

Vgs (Max) :

±15V

JESD-609 Code :

e3

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.3A

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

1997

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G3

FET Type :

N-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

830mW Tc

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

JEDEC-95 Code :

TO-236AB

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260