BFT93W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Power Dissipation Ambient-Max :

0.3W

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Power Dissipation-Max (Abs) :

0.3W

Voltage - Collector Emitter Breakdown (Max) :

12V

Noise Figure (dB Typ @ f) :

2.4dB ~ 3dB @ 500MHz ~ 1GHz

Package / Case :

SC-70, SOT-323

Terminal Finish :

Tin (Sn)

Frequency - Transition :

4GHz

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Power - Max :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BFT93

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

Configuration :

Single

Number of Elements :

1

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

50mA

Highest Frequency Band :

L B

JESD-609 Code :

e3

Transition Frequency :

4000MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 30mA 5V

Published :

1995

Pin Count :

3

Additional Feature :

High Reliability