BFT92,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Current - Collector (Ic) (Max) :

25mA

Frequency - Transition :

5GHz

Noise Figure (dB Typ @ f) :

2.5dB @ 500MHz

Mounting Type :

Surface Mount

Transition Frequency :

5000MHz

JESD-30 Code :

R-PDSO-G3

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 14mA 10V

Additional Feature :

LOW NOISE

Transistor Type :

PNP

Voltage - Collector Emitter Breakdown (Max) :

15V

Power Dissipation Ambient-Max :

0.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Operating Temperature :

175°C TJ

HTS Code :

8541.21.00.75

Power - Max :

300mW

JEDEC-95 Code :

TO-236AB

Power Dissipation-Max (Abs) :

0.3W

Qualification Status :

Not Qualified

Pin Count :

3

Published :

1997

Terminal Form :

Gull wing

ECCN Code :

EAR99

Reference Standard :

CECC

Configuration :

Single

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Base Part Number :

BFT92

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER