BFT92E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

PNP

Max Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

15V

Min Operating Temperature :

-65°C

Noise Figure (dB Typ @ f) :

2dB ~ 3.2dB @ 900MHz ~ 1.8GHz

Qualification Status :

Not Qualified

Power Dissipation :

200mW

Frequency :

5GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Current Rating :

-25mA

Gain :

8dB ~ 13.5dB

Max Collector Current :

25mA

Emitter Base Voltage (VEBO) :

2V

Terminal Position :

Dual

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Number of Elements :

1

Mount :

Surface Mount

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Base Part Number :

BFT92

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 15mA 8V

Collector Base Voltage (VCBO) :

20V

Voltage - Rated DC :

-15V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector-Base Capacitance-Max :

0.8pF

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Number of Pins :

3

Published :

2001

Configuration :

Single

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Max Breakdown Voltage :

15V

Transition Frequency :

5000MHz

Collector Emitter Breakdown Voltage :

15V