BFT93,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

0.3W

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation Ambient-Max :

0.3W

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Terminal Position :

Dual

Configuration :

Single

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 30mA 5V

Number of Elements :

1

HTS Code :

8541.21.00.75

Pin Count :

3

Terminal Finish :

Tin (Sn)

Additional Feature :

LOW NOISE

Number of Terminations :

3

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

35mA

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

12V

Published :

1997

Polarity/Channel Type :

PNP

Base Part Number :

BFT93

RoHS Status :

ROHS3 Compliant

Power - Max :

300mW

Terminal Form :

Gull wing

Noise Figure (dB Typ @ f) :

2.4dB @ 500MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Operating Temperature :

175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

CECC

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

Transition Frequency :

5000MHz

JESD-30 Code :

R-PDSO-G3

Frequency - Transition :

5GHz