BFS17WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Frequency - Transition :

1.4GHz

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

25V

Radiation Hardening :

No

Max Breakdown Voltage :

15V

Factory Lead Time :

4 Weeks

Collector-Base Capacitance-Max :

0.8pF

Base Part Number :

BFS17

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

ECCN Code :

EAR99

Frequency :

2.5GHz

Collector Emitter Breakdown Voltage :

15V

Length :

2mm

Emitter Base Voltage (VEBO) :

2.5V

Power Dissipation :

280mW

Number of Terminations :

3

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Package / Case :

SC-70, SOT-323

Number of Pins :

3

Operating Temperature :

150°C TJ

Published :

2011

Width :

1.25mm

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2mA 1V

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3.5dB ~ 5dB @ 800MHz

Terminal Position :

Dual

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

400mV

Transistor Element Material :

SILICON

Configuration :

Single

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Transition Frequency :

2500MHz

Height :

800μm

Halogen Free :

Halogen Free

Max Collector Current :

25mA

Collector Emitter Voltage (VCEO) :

15V

Max Power Dissipation :

280mW