BFS17,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 2mA 1V

Terminal Position :

Dual

Configuration :

Single

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Power Dissipation Ambient-Max :

0.3W

Frequency - Transition :

1GHz

Current - Collector (Ic) (Max) :

25mA

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Published :

1996

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

JESD-30 Code :

R-PDSO-G3

Voltage - Collector Emitter Breakdown (Max) :

15V

Surface Mount :

yes

Base Part Number :

BFS17

JESD-609 Code :

e3

Reference Standard :

CECC

Collector-Base Capacitance-Max :

1.5pF

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

4.5dB @ 500MHz

Terminal Form :

Gull wing

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

1600MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Power Dissipation-Max (Abs) :

0.3W

Number of Terminations :

3

Power - Max :

300mW