BFS17PE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2mA 1V

Transition Frequency :

2500MHz

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Collector-Base Capacitance-Max :

0.8pF

Max Breakdown Voltage :

15V

Height :

1mm

Max Power Dissipation :

280mW

Configuration :

Single

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

15V

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

25V

Radiation Hardening :

No

Number of Elements :

1

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

15V

Test Frequency :

800MHz

Transistor Type :

NPN

Halogen Free :

Not Halogen Free

Max Collector Current :

25mA

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Current Rating :

25mA

Base Part Number :

BFS17

Power Dissipation :

280mW

Transistor Application :

AMPLIFIER

Frequency :

2.5MHz

Noise Figure (dB Typ @ f) :

3.5dB ~ 5dB @ 800MHz

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Width :

1.3mm

Terminal Form :

Gull wing

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

2.5V

Packaging :

Tape and Reel (TR)

Published :

2005

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency - Transition :

1.4GHz

Number of Terminations :

3

Length :

2.9mm

hFE Min :

20

Termination :

SMD/SMT

Pin Count :

3

Voltage - Rated DC :

15V

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

400mV