BFS17HTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Gain Bandwidth Product :

1.3 GHz

Height :

1mm

Collector Emitter Breakdown Voltage :

15V

Continuous Collector Current :

25mA

Element Configuration :

Single

Noise Figure (dB Typ @ f) :

4.5dB @ 500MHz

JESD-609 Code :

e3

Max Collector Current :

25mA

Terminal Position :

Dual

Length :

3.05mm

Polarity/Channel Type :

NPN

hFE Min :

70

Voltage - Rated DC :

15V

Qualification Status :

Not Qualified

Power Dissipation :

330mW

Weight :

7.994566mg

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Terminations :

3

Terminal Form :

Gull wing

Frequency :

1.3GHz

Number of Pins :

3

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

15V

Max Breakdown Voltage :

15V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

BFS17

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 2mA 1V

Max Power Dissipation :

330mW

Collector Base Voltage (VCBO) :

25V

Lead Free :

Lead Free

ECCN Code :

EAR99

Transition Frequency :

1300MHz

Width :

1.4mm

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current Rating :

25mA

Published :

1996

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

2.5V