BFG591,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Frequency - Transition :

7GHz

Highest Frequency Band :

L B

Case Connection :

COLLECTOR

Pin Count :

4

Package / Case :

TO-261-4, TO-261AA

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Published :

1995

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 70mA 8V

Voltage - Collector Emitter Breakdown (Max) :

15V

Power - Max :

2W

Number of Elements :

1

Number of Terminations :

4

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-G4

Base Part Number :

BFG591

Transition Frequency :

7000MHz

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

200mA

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

1.2W

Qualification Status :

Not Qualified