BFG505,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Surface Mount :

yes

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Base Part Number :

BFG505

Current - Collector (Ic) (Max) :

18mA

Power - Max :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 6V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Reference Standard :

CECC

Number of Terminations :

4

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.1dB @ 900MHz

Voltage - Collector Emitter Breakdown (Max) :

15V

Highest Frequency Band :

L B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Transistor Type :

NPN

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Operating Temperature :

175°C TJ

Number of Elements :

1

Pin Count :

4

Power Dissipation-Max (Abs) :

0.15W

Qualification Status :

Not Qualified

Frequency - Transition :

9GHz

Additional Feature :

High Reliability

Configuration :

Single

Package / Case :

TO-253-4, TO-253AA

Published :

1998

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Transition Frequency :

9000MHz

Power Dissipation Ambient-Max :

0.15W