BFG520W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

0.5W

Power - Max :

500mW

Polarity/Channel Type :

NPN

Number of Terminations :

4

Additional Feature :

LOW NOISE, HIGH RELIABILITY

JESD-30 Code :

R-PDSO-G4

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

Pin Count :

4

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Temperature :

175°C TJ

Current - Collector (Ic) (Max) :

70mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Frequency - Transition :

9GHz

JESD-609 Code :

e3

Terminal Form :

Gull wing

Base Part Number :

BFG520

Package / Case :

SOT-343 Reverse Pinning

Transition Frequency :

9000MHz

Highest Frequency Band :

L B

Published :

1998

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Configuration :

Single

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.75

Voltage - Collector Emitter Breakdown (Max) :

15V

Surface Mount :

yes

Qualification Status :

Not Qualified