BFG520,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

9000MHz

Transistor Element Material :

SILICON

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1997

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Base Part Number :

BFG520

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

9GHz

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

JESD-609 Code :

e3

HTS Code :

8541.21.00.75

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

0.3W

Power - Max :

300mW

Qualification Status :

Not Qualified

Reference Standard :

CECC

Case Connection :

COLLECTOR

Terminal Position :

Dual

ECCN Code :

EAR99

Package / Case :

TO-253-4, TO-253AA

Voltage - Collector Emitter Breakdown (Max) :

15V

Current - Collector (Ic) (Max) :

70mA

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Highest Frequency Band :

L B

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

JESD-30 Code :

R-PDSO-G4

Operating Temperature :

175°C TJ

Power Dissipation Ambient-Max :

0.3W