BFG520,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Transistor Type :

NPN

Number of Terminations :

4

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-253-4, TO-253AA

Published :

1997

Highest Frequency Band :

L B

Case Connection :

COLLECTOR

Configuration :

Single

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Additional Feature :

High Reliability

Terminal Form :

Gull wing

Transition Frequency :

9000MHz

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G4

Polarity/Channel Type :

NPN

Reference Standard :

CECC

Power Dissipation Ambient-Max :

0.3W

Qualification Status :

Not Qualified

Frequency - Transition :

9GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Current - Collector (Ic) (Max) :

70mA

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Power - Max :

300mW

Base Part Number :

BFG520

Operating Temperature :

175°C TJ

Power Dissipation-Max (Abs) :

0.3W

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

15V

HTS Code :

8541.21.00.75

Number of Elements :

1

JESD-609 Code :

e3

ECCN Code :

EAR99