BFG540W/X,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

0.5W

Additional Feature :

High Reliability

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Matte Tin (Sn)

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.4dB @ 900MHz

Operating Temperature :

175°C TJ

Transistor Element Material :

SILICON

Configuration :

Single

JESD-609 Code :

e3

Highest Frequency Band :

L B

Surface Mount :

yes

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 40mA 8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

9000MHz

Terminal Form :

Gull wing

Frequency - Transition :

9GHz

Terminal Position :

Dual

Power - Max :

500mW

Power Dissipation Ambient-Max :

0.5W

Transistor Type :

NPN

Case Connection :

COLLECTOR

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Base Part Number :

BFG540

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

120mA

Package / Case :

SC-82A, SOT-343

Published :

1995

Voltage - Collector Emitter Breakdown (Max) :

15V

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN