BFG590/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G4

Current - Collector (Ic) (Max) :

200mA

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 70mA 8V

Transistor Type :

NPN

ECCN Code :

EAR99

Terminal Position :

Dual

Power - Max :

400mW

Case Connection :

COLLECTOR

Transistor Application :

AMPLIFIER

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Published :

1998

JESD-609 Code :

e3

Additional Feature :

High Reliability

Number of Elements :

1

Number of Terminations :

4

Frequency - Transition :

5GHz

Package / Case :

TO-253-4, TO-253AA

Terminal Finish :

Matte Tin (Sn)

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

Transition Frequency :

5000MHz

Voltage - Collector Emitter Breakdown (Max) :

15V

Pin Count :

4

Power Dissipation-Max (Abs) :

0.65W

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

Single

Highest Frequency Band :

L B

Operating Temperature :

175°C TJ