BFG541,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.4dB @ 900MHz

Qualification Status :

Not Qualified

Surface Mount :

yes

ECCN Code :

EAR99

Highest Frequency Band :

L B

Terminal Finish :

Tin (Sn)

Operating Temperature :

175°C TJ

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 40mA 8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation Ambient-Max :

0.65W

Base Part Number :

BFG541

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

Published :

1997

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector (Ic) (Max) :

120mA

Number of Terminations :

4

Terminal Position :

Dual

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

0.65W

Configuration :

Single

Transistor Type :

NPN

JESD-30 Code :

R-PDSO-G4

Number of Elements :

1

Pin Count :

4

Voltage - Collector Emitter Breakdown (Max) :

15V

JESD-609 Code :

e3

Transition Frequency :

9000MHz

Power - Max :

650mW

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Frequency - Transition :

9GHz