BFG425W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

SWITCHING

Configuration :

Single

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Pin Count :

4

Polarity/Channel Type :

NPN

HTS Code :

8541.21.00.75

Current - Collector (Ic) (Max) :

30mA

ECCN Code :

EAR99

Transition Frequency :

25000MHz

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Highest Frequency Band :

L B

Packaging :

Tape and Reel (TR)

Power Dissipation-Max (Abs) :

0.135W

Power Dissipation Ambient-Max :

0.135W

Gain :

20dB

Frequency - Transition :

25GHz

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Case Connection :

Emitter

Number of Terminations :

4

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Power - Max :

135mW

Number of Elements :

1

Published :

1997

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 2V

Package / Case :

SC-82A, SOT-343

Surface Mount :

yes

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Base Part Number :

BFG425

Peak Reflow Temperature (Cel) :

260