BFG425W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Configuration :

Single

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.75

Number of Terminations :

4

Frequency - Transition :

25GHz

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation Ambient-Max :

0.135W

Power - Max :

135mW

Package / Case :

SC-82A, SOT-343

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 2V

Case Connection :

Emitter

Pin Count :

4

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Highest Frequency Band :

L B

Published :

1997

Base Part Number :

BFG425

Gain :

20dB

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

0.135W

Current - Collector (Ic) (Max) :

30mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Tin (Sn)

Transition Frequency :

25000MHz

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Surface Mount :

yes