BFG425W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Base Part Number :

BFG425

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

0.135W

Published :

1997

Power - Max :

135mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Configuration :

Single

Mounting Type :

Surface Mount

Power Dissipation Ambient-Max :

0.135W

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 2V

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Package / Case :

SC-82A, SOT-343

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Current - Collector (Ic) (Max) :

30mA

Gain :

20dB

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Transition Frequency :

25000MHz

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Frequency - Transition :

25GHz

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

L B

Transistor Type :

NPN

Terminal Finish :

Tin (Sn)

Case Connection :

Emitter

Qualification Status :

Not Qualified

Surface Mount :

yes

Pin Count :

4

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G4