BFG425W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Published :

1997

Power Dissipation Ambient-Max :

0.135W

Power - Max :

135mW

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Configuration :

Single

Power Dissipation-Max (Abs) :

0.135W

RoHS Status :

ROHS3 Compliant

Highest Frequency Band :

L B

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SC-82A, SOT-343

Current - Collector (Ic) (Max) :

30mA

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Number of Terminations :

4

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Frequency - Transition :

25GHz

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

25000MHz

Gain :

20dB

JESD-30 Code :

R-PDSO-G4

Base Part Number :

BFG425

Voltage - Collector Emitter Breakdown (Max) :

4.5V

HTS Code :

8541.21.00.75

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 2V

Case Connection :

Emitter

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Elements :

1

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Pin Count :

4