BFG480W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

360mW

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

250mA

HTS Code :

8541.21.00.75

Published :

1998

Qualification Status :

Not Qualified

Highest Frequency Band :

L B

Additional Feature :

LOW NOISE

Pin Count :

4

Terminal Form :

Gull wing

Gain :

16dB

Packaging :

Tape and Reel (TR)

Base Part Number :

BFG480

Transistor Type :

NPN

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 80mA 2V

Configuration :

Single

Case Connection :

Emitter

Package / Case :

SC-82A, SOT-343

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

1.2dB ~ 1.8dB @ 900MHz ~ 2GHz

Number of Elements :

1

Frequency - Transition :

21GHz

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Surface Mount :

yes

Number of Terminations :

4

Operating Temperature :

150°C TJ

Transition Frequency :

21000MHz

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.36W

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-G4