BFG424F,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

0.135W

Terminal Position :

Dual

Highest Frequency Band :

L B

Number of Terminations :

4

JESD-609 Code :

e3

Frequency - Transition :

25GHz

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Transistor Application :

SWITCHING

Transition Frequency :

25000MHz

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Current - Collector (Ic) (Max) :

30mA

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Base Part Number :

BFG424

Gain :

23dB

Pin Count :

4

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 2V

ECCN Code :

EAR99

Additional Feature :

LOW NOISE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Configuration :

Single

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Number of Elements :

1

HTS Code :

8541.21.00.75

Power - Max :

135mW

Package / Case :

SOT-343 Reverse Pinning

JESD-30 Code :

R-PDSO-F4