BFG410W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

SWITCHING

Additional Feature :

LOW NOISE

HTS Code :

8541.21.00.75

Power - Max :

54mW

Base Part Number :

BFG410

ECCN Code :

EAR99

Package / Case :

SC-82A, SOT-343

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Highest Frequency Band :

L B

Mounting Type :

Surface Mount

Transition Frequency :

22000MHz

Power Dissipation Ambient-Max :

0.054W

JESD-30 Code :

R-PDSO-G4

Case Connection :

Emitter

Voltage - Collector Emitter Breakdown (Max) :

4.5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 2V

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.054W

Terminal Position :

Dual

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

12mA

Polarity/Channel Type :

NPN

Frequency - Transition :

22GHz

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 2GHz

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Configuration :

Single

Published :

1997

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Operating Temperature :

150°C TJ

Gain :

21dB