BFG410W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Highest Frequency Band :

L B

Case Connection :

Emitter

Transistor Type :

NPN

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G4

Base Part Number :

BFG410

Transition Frequency :

22000MHz

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 2V

ECCN Code :

EAR99

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 2GHz

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pin Count :

4

Power - Max :

54mW

Power Dissipation-Max (Abs) :

0.054W

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

12mA

Operating Temperature :

150°C TJ

Package / Case :

SC-82A, SOT-343

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Published :

1997

HTS Code :

8541.21.00.75

Power Dissipation Ambient-Max :

0.054W

Frequency - Transition :

22GHz

Terminal Form :

Gull wing

Number of Elements :

1

Additional Feature :

LOW NOISE

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Gain :

21dB