BF423G
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- Mfr.Part #
- BF423G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 250V 0.5A TO92
- Stock
- 48,211
- In Stock ：
- 48,211
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 60MHz
- Voltage - Rated DC :
- -250V
- Base Part Number :
- BF423
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Transition Frequency :
- 60MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Max Collector Current :
- 500mA
- Current Rating :
- -50mA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 830mW
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -250V
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- -500mV
- Collector Emitter Voltage (VCEO) :
- 500mV
- Mounting Type :
- Through Hole
- Frequency :
- 60MHz
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- hFE Min :
- 50
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Power Dissipation :
- 830mW
- Collector Emitter Breakdown Voltage :
- 250V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- PNP
- Datasheets
- BF423G
BF423G Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF423G Overview
This device has a DC current gain of 50 @ 25mA 20V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 60MHz.A maximum collector current of 500mA volts is possible.
BF423G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 60MHz
BF423G Applications
There are a lot of ON Semiconductor
BF423G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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