BF420ZL1G
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- Mfr.Part #
- BF420ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.05A TO92
- Stock
- 21,986
- In Stock ：
- 21,986
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Base Part Number :
- BF420
- Collector Emitter Saturation Voltage :
- 500mV
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Power Dissipation :
- 830mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Published :
- 2001
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Max Collector Current :
- 50mA
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Element Configuration :
- Single
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Power Dissipation :
- 830mW
- Transition Frequency :
- 60MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Mounting Type :
- Through Hole
- Additional Feature :
- EUROPEAN PART NUMBER
- Qualification Status :
- Not Qualified
- hFE Min :
- 50
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 300V
- Mount :
- Through Hole
- Voltage - Rated DC :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 50mA
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 300V
- Frequency :
- 60MHz
- Gain Bandwidth Product :
- 60MHz
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Datasheets
- BF420ZL1G
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BF420ZL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
BF420ZL1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF420ZL1G Applications
There are a lot of ON Semiconductor
BF420ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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