BF421,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

300V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

HTS Code :

8541.21.00.95

Mounting Type :

Through Hole

Number of Elements :

1

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Current - Collector Cutoff (Max) :

10nA ICBO

Collector-Base Capacitance-Max :

1.6pF

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Packaging :

Bulk

Frequency - Transition :

60MHz

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.8W

Power - Max :

830mW

Surface Mount :

No

Base Part Number :

BF421

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 30mA

Operating Temperature :

150°C TJ

Current - Collector (Ic) (Max) :

50mA

Terminal Position :

BOTTOM

Transition Frequency :

60MHz

Published :

1996

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

O-PBCY-T3

VCEsat-Max :

0.6 V

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified