BF421,112

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Mfr.Part #
BF421,112
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 300V 0.05A TO92-3
Stock
35,751
In Stock :
35,751

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Power - Max :
830mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
BF421
HTS Code :
8541.21.00.95
JESD-30 Code :
O-PBCY-T3
Collector-Base Capacitance-Max :
1.6pF
Voltage - Collector Emitter Breakdown (Max) :
300V
Peak Reflow Temperature (Cel) :
250
ECCN Code :
EAR99
Transistor Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
40
Configuration :
Single
Current - Collector (Ic) (Max) :
50mA
Transistor Application :
AMPLIFIER
Frequency - Transition :
60MHz
Polarity/Channel Type :
PNP
Surface Mount :
No
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 25mA 20V
Transition Frequency :
60MHz
Packaging :
Bulk
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
JESD-609 Code :
e3
Published :
1996
Terminal Finish :
Matte Tin (Sn)
Power Dissipation-Max (Abs) :
0.8W
Reach Compliance Code :
Unknown
Number of Elements :
1
Current - Collector Cutoff (Max) :
10nA ICBO
Mounting Type :
Through Hole
VCEsat-Max :
0.6 V
Terminal Position :
BOTTOM
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Pin Count :
3
Datasheets
BF421,112
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BF421,112 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:BF421, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, BF421,112 pinout, BF421,112 datasheet PDF, BF421,112 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BF421,112 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BF421,112


PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BF421,112 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 25mA 20V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 60MHz in the part.Single BJT transistor shows a 300V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BF421,112 Features


the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
a transition frequency of 60MHz


BF421,112 Applications


There are a lot of NXP USA Inc.
BF421,112 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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