BF421ZL1
- Mfr.Part #
- BF421ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.05A TO92
- Stock
- 22,825
- In Stock :
- 22,825
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Additional Feature :
- EUROPEAN PART NUMBER
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- -300V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 60MHz
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 830mW
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Current Rating :
- -50mA
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 300V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- hFE Min :
- 50
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Lead Free :
- Contains Lead
- Collector Emitter Saturation Voltage :
- -500mV
- Element Configuration :
- Single
- Max Collector Current :
- 50mA
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reach Compliance Code :
- not_compliant
- Collector Emitter Voltage (VCEO) :
- 500mV
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 60MHz
- Power Dissipation :
- 830mW
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- 240
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BF421
- Frequency :
- 60MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Voltage - Rated DC :
- -300V
- Datasheets
- BF421ZL1

PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BF421ZL1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 60MHz.During maximum operation, collector current can be as low as 50mA volts.
BF421ZL1 Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 60MHz
BF421ZL1 Applications
There are a lot of ON Semiconductor
BF421ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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