BF421ZL1
- Mfr.Part #
- BF421ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.05A TO92
- Stock
- 22,825
- In Stock :
- 22,825
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Published :
- 2005
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current Rating :
- -50mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -500mV
- Base Part Number :
- BF421
- Additional Feature :
- EUROPEAN PART NUMBER
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 240
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 60MHz
- Max Collector Current :
- 50mA
- hFE Min :
- 50
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- -300V
- Power Dissipation :
- 830mW
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 830mW
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Collector Emitter Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Frequency :
- 60MHz
- Transition Frequency :
- 60MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- -300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Reach Compliance Code :
- not_compliant
- Datasheets
- BF421ZL1
BF421ZL1 Documents

PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BF421ZL1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 60MHz.During maximum operation, collector current can be as low as 50mA volts.
BF421ZL1 Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 60MHz
BF421ZL1 Applications
There are a lot of ON Semiconductor
BF421ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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