BF422
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- Mfr.Part #
- BF422
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.05A TO92
- Stock
- 24,567
- In Stock ：
- 24,567
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Breakdown Voltage :
- 250V
- Collector Base Voltage (VCBO) :
- 250V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 830mW
- Voltage - Rated DC :
- 250V
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Peak Reflow Temperature (Cel) :
- 240
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 50mA
- Collector Emitter Voltage (VCEO) :
- 250V
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 60MHz
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Max Collector Current :
- 50mA
- Gain Bandwidth Product :
- 60MHz
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 50
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Frequency :
- 60MHz
- Qualification Status :
- Not Qualified
- Terminal Position :
- BOTTOM
- Base Part Number :
- BF422
- Published :
- 2005
- Power Dissipation :
- 830mW
- Datasheets
- BF422
BF422 Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF422 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
BF422 Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422 Applications
There are a lot of ON Semiconductor
BF422 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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