BF420,112
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- Mfr.Part #
- BF420,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.05A TO92-3
- Stock
- 10,487
- In Stock ：
- 10,487
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- JESD-30 Code :
- O-PBCY-T3
- Peak Reflow Temperature (Cel) :
- 250
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 50mA
- Transition Frequency :
- 60MHz
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 60MHz
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- BF420
- VCEsat-Max :
- 0.6 V
- Power - Max :
- 830mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Surface Mount :
- No
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Collector-Base Capacitance-Max :
- 1.6pF
- JESD-609 Code :
- e3
- Configuration :
- Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Power Dissipation-Max (Abs) :
- 0.8W
- Published :
- 2007
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- ECCN Code :
- EAR99
- Datasheets
- BF420,112
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF420,112 Overview
This device has a DC current gain of 50 @ 25mA 20V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 30mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 60MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
BF420,112 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
a transition frequency of 60MHz
BF420,112 Applications
There are a lot of NXP USA Inc.
BF420,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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