BF420-AP
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- Mfr.Part #
- BF420-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92-3
- Stock
- 48,503
- In Stock ：
- 48,503
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 600mV
- Max Power Dissipation :
- 830mW
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 60MHz
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 60MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- BF420
- Transistor Type :
- NPN
- JESD-30 Code :
- O-PBCY-T3
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 300V
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 50
- Datasheets
- BF420-AP
BF420-AP Documents
,TO-226_straightlead.jpg)
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BF420-AP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 60MHz.During maximum operation, collector current can be as low as 500mA volts.
BF420-AP Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 60MHz
BF420-AP Applications
There are a lot of STMicroelectronics
BF420-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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