BF421ZL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Additional Feature :

EUROPEAN PART NUMBER

Base Part Number :

BF421

Transistor Element Material :

SILICON

Max Collector Current :

50mA

Number of Pins :

3

JESD-609 Code :

e1

Surface Mount :

No

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

RoHS Status :

RoHS Compliant

Published :

2005

Pin Count :

3

Collector Emitter Saturation Voltage :

-500mV

Number of Elements :

1

Transistor Type :

PNP

Element Configuration :

Single

Packaging :

Tape and Box (TB)

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

60MHz

Collector Emitter Voltage (VCEO) :

500mV

Collector Base Voltage (VCBO) :

-300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

50mA

Current Rating :

-50mA

Current - Collector Cutoff (Max) :

10nA ICBO

Voltage - Rated DC :

-300V

Collector Emitter Breakdown Voltage :

300V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lead Free :

Lead Free

HTS Code :

8541.21.00.95

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

60MHz

Max Power Dissipation :

830mW

Transistor Application :

AMPLIFIER

hFE Min :

50

Number of Terminations :

3

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V