BF422RL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Max Power Dissipation :

830mW

Gain Bandwidth Product :

60MHz

Max Collector Current :

50mA

Collector Base Voltage (VCBO) :

250V

Qualification Status :

Not Qualified

Power Dissipation :

830mW

Collector Emitter Breakdown Voltage :

250V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Current Rating :

50mA

Frequency :

60MHz

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

500mV

hFE Min :

50

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

BF422

Voltage - Rated DC :

250V

JESD-609 Code :

e1

ECCN Code :

EAR99

Transistor Type :

NPN

Terminal Position :

BOTTOM

Additional Feature :

EUROPEAN PART NUMBER

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

250V

Transition Frequency :

60MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Peak Reflow Temperature (Cel) :

260

Mount :

Through Hole

Transistor Application :

AMPLIFIER

Number of Pins :

3

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

NPN

Pin Count :

3